VOLTAGE-DRIVE TYPE POWER SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a power semiconductor device wherein, in a power semiconductor device in which a plurality of power semiconductor elements are connected in parallel for press-contacting, current balance among elements and dv/dt and di/dt can be made satisfactory at switching of an IEGT(injection enhanced gate transistor), for improved breakdown-resistance level. SOLUTION: This device is a voltage drive type power semiconductor device, wherein an IEGT chip 2 is connected to an external terminal of a package with a connection medium, thin copper plates 11a and 11b between an emitter press-contact electrode plate 6 and an emitter of the IEGT chip 2 is allowed to have an inductance component 100 nH or less, and the emitter of the power semiconductor device is so connected to the emitter press-contact electrode plate 6 as to contain the thin copper plates 11a and 11b.