METHOD OF FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE AND PLANARIZATION OF INSULATION FILM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which reduces the thickness of planarization of an insulation film. SOLUTION: This method comprises forming insulation film layers 14, 15 on a semiconductor substrate 10, having cell regions and space regions which have no conductive film pattern 12 (12a, 12b), forming a first layer insulation film 18 on the insulation film layers, etching it to form a second layer insulation film 20 having a planarized top surface on the substrate 10 contg. it, while leaving a given thickness of the first insulation film 18 on the space regions, etching the insulation film 20 to form contact holes 22 so as to expose the semiconductor substrate 10 between the pattern 12 on the cell regions, forming a second conductive film 24 on the substrate 10 contg. it, filling the contact holes 22, etching the conductive film 24 and insulation film 20 in a single planarization step to form contact plugs 24a.