发明名称 |
Semiconductor optical device with active layer of quantum well structure, use method thereof, light source apparatus including the same, and optical communication system using the same |
摘要 |
An optical semiconductor device includes a substrate and an active region formed on the substrate. The active region includes a plurality of quantum well layers containing at least one tensile-strained well layer, and the plurality of quantum well layers include a plurality of quantum well layers whose band gaps are different from each other. Such an active region makes it possible to expand a wavelength range over which TE-mode and TM-mode gains balance with each other or are approximately equal to each other. <IMAGE> |
申请公布号 |
EP0834972(A3) |
申请公布日期 |
1999.05.12 |
申请号 |
EP19970117234 |
申请日期 |
1997.10.06 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SEIICHI, MIYAZAWA |
分类号 |
G02F1/015;B82Y20/00;H01S5/00;H01S5/042;H01S5/062;H01S5/0625;H01S5/34;H01S5/40;H04B10/272;H04B10/275;H04B10/278;H04B10/40;H04B10/50;H04B10/532;H04B10/54;H04B10/572;H04B10/58;H04B10/60 |
主分类号 |
G02F1/015 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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