发明名称 Semiconductor optical device with active layer of quantum well structure, use method thereof, light source apparatus including the same, and optical communication system using the same
摘要 An optical semiconductor device includes a substrate and an active region formed on the substrate. The active region includes a plurality of quantum well layers containing at least one tensile-strained well layer, and the plurality of quantum well layers include a plurality of quantum well layers whose band gaps are different from each other. Such an active region makes it possible to expand a wavelength range over which TE-mode and TM-mode gains balance with each other or are approximately equal to each other. <IMAGE>
申请公布号 EP0834972(A3) 申请公布日期 1999.05.12
申请号 EP19970117234 申请日期 1997.10.06
申请人 CANON KABUSHIKI KAISHA 发明人 SEIICHI, MIYAZAWA
分类号 G02F1/015;B82Y20/00;H01S5/00;H01S5/042;H01S5/062;H01S5/0625;H01S5/34;H01S5/40;H04B10/272;H04B10/275;H04B10/278;H04B10/40;H04B10/50;H04B10/532;H04B10/54;H04B10/572;H04B10/58;H04B10/60 主分类号 G02F1/015
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