| 摘要 |
<p>The invention concerns a method for treating substrates, in particular semiconductors, by implanting atoms so as to produce a substrate of cavities at a controlled depth, characterised in that it comprises steps which consists in: implanting atoms in the substrate at a first depth, to obtain a first concentration of atoms at said first depth; implanting atoms in the substrate at a second depth, different from the first, to obtain at said second depth, a second concentration of atoms, lower than the first; carrying out on the substrate a treatment for causing at least part of the atoms implanted in said second depth to migrate towards the first depth so as to create the cavities at the first depth preferably.</p> |
