| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal SiC by which the SiC can be efficiently grown to provide a good quality single crystal hardly having not only a micropipe defect but also lattice distortion and lattice defect, and utilization as a semiconductor material and expansion of applicability is promoted. SOLUTION: Aβ-SiC layer 3 is formed on the surface of anα-SiC single crystal substrate 1 through a boron-containing layer 2 by a thermal CVD method, and the obtained composite body M is subjected to a heat treatment at 2,200-2,400 deg.C to convert a polycrystal body of theβ-SiC layer 3 to theα-SiC, and orient the convertedα-SiC to the same bearing as the crystal axis of theα-SiC single crystal substrate 1, and to integrally grow theα-SiC single crystal.
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