| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a quartz heat treatment jig for use in the production of semiconductor devices, which prevents the deposition of contaminating metal and has good workability. SOLUTION: The body of a heat treatment jig, which holds silicon wafers 2 and is subjected to a heat treatment step in producing semiconductor devices, is made of an electrofused quartz 8 with a high heat resistance, and that portion of the jig which is close to the silicon wafers 2 is made of an oxyhydrogen-flame fused quartz or synthetic quartz 7 which evolves a relatively small amount of containating metal impurities. Alternatively, the body of the heat treatment jig is constituted of an oxyhydrogen-flame fused quartz 8 with a high heat resistance, and that portion of the jig which is close to the silicon wafers 2 is made of a synthetic quartz 7 which evolves a relatively small amount of containating metal impurities. The silicon wafers 2 are separated from the electrofused quartz or oxyhydrogen-flame fused quartz 8 by a predetermined distance g.</p> |
