| 摘要 |
PROBLEM TO BE SOLVED: To improve the dimensional accuracy of resist patterns obtd. in the method for forming the resist patterns of a positive type by subjecting a resist film consisting of negative resist of a chemical amplification type to pattern exposure with UV rays. SOLUTION: The chemical amplification type negative resist having a polymer, an acid generating agent which generates an acid when irradiated with the UV rays, and a crosslinking agent for crosslinking the polymer in the presence of the acid is applied on a semiconductor substrate 11 to form the resist film 12. This resist film 12 is then subjected to pattern exposure with the UV rays 13 to generate the acid in the exposed parts 12a of the resist film 12 and to crosslink the polymer by the effect of the generated acid. A silanizing agent 15 is thereafter supplied to the surface of the resist film 12 to form a silanization layer 16 on the surface of the unexposed parts 12b of the resist film 12. The resist film 12 is subjected to dry etching with this silanization layer 16 as a mask, by which the resist patterns 18 consisting of the exposed parts 12b of the resist film 12 are formed. |
