| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming the copper wiring of a semiconductor element for maintaining low resistance and excellent electric mobility, and for improving productivity by saving a dry etching process, and reducing a film forming time. SOLUTION: A conductive layer 2 is formed on the inside face and upper face of a substrate 1, and insulating layers 4 and 6 are formed on the substrate 1 including the conductive layer, and the insulating layer at a position corresponding to each conductive layer is etched so that trenches (a), (b), and (c) can be formed. Moreover, a barrier layer pattern 7a is formed on the inside face of the trench and the upper face of the insulating layer in the surrounding of the trench, and a seed layer 21 is formed only on each barrier layer on the inside face of the trench, and a copper layer 22 is selectively formed on the upper face of the barrier layer pattern and the seed layer. |
