| 摘要 |
PROBLEM TO BE SOLVED: To improve resistance to static electricity and resistance to surge. SOLUTION: In this semiconductor device, a lead frame 12 is constituted of a chip mounting part 18 and a terminal part 19, and a semiconductor chip 1 in which an MOSFET 2 being a vertical type high withstand switching transistor, a JFET 5 being a starting power supply element, and an IC 7 for control are integrated are mounted on a chip mounting part 18. A drain pad 3 of the MOSFET2 and a drain pad 6 of the JFET 5 are connected with a drain terminal 13 of the lead frame by using bonding wires 9. The drain pad 3 of the MOSFET 2 and the drain pad 6 of the JFET 5 are connected with the drain terminal 13 by using the bonding wires 9, thereby improving resistance to surge and resistance to static electricity. |
