| 摘要 |
<p>A dielectric film on a semiconductor or integrated circuit substrate and method of making it are disclosed, wherein said dielectric film has a backbone structure comprised substantially of inorganic groups and organic groups and organic side groups attached to said backbone structure to form a hybrid of inorganic and organic materials that provide said film having a dielectric constant of less than 4.0 and exhibiting weight loss of less than 2 % per hour at 400 °C in nitrogen. The dielectric film is deposited on a substrate (14) located on a support (16) by a plasma CVD process, and the support being biased by a r.f. generator (18). An organosilicon precursor is introduced into a deposition chamber (11) through gas inlets (26 or 28).</p> |
