| 摘要 |
The present invention relates to a method for manufacturing a semiconductor light emitting device, and a semiconductor light emitting device manufactured by such method. The method comprises the steps of: preparing a first substrate which comprises a first surface and a second surface, which faces the first surface, a first groove and a second groove, which face the second surface side from the first surface side, wherein conducting units are formed on the first groove and the second groove respectively, such that the first and second grooves can limit the thermal expansion of each conducting unit when the thermal expansion occurs; coupling a second substrate to the first substrate by means of a coupling layer in the first surface side; fixing a semiconductor light emitting device chip having a growth substrate, a plurality of semiconductor layers grown on the growth substrate and a first and second electrodes which are electrically connected to a first and second semiconductor layers, respectively, on the first substrate from the second surface side; and fixing the first and second electrodes on the conducting units of the first groove and the second groove respectively. |
