| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a TFT in which a polysilicon film above the boundary of a glass substrate and a gate electrode having different thermal conductivity is protected against cracking due to stress when an amorphous silicon film is polycrystallized by laser irradiation. SOLUTION: A gate electrode 2 of chromium, a gate insulation film 3 and an amorphous silicon film are laminated on a glass substrate and the amorphous silicon film is polycrystallized by irradiating with excimer laser to produce a TFT having an active layer 4 of polysilicon film. The gate electrode 2 is provided with protrusions 15 on the starting side and ending side of excimer laser irradiation in order to suppress thermal stress due to laser light on the opposite sides of the gate electrode 2.</p> |
