| 摘要 |
<p>PROBLEM TO BE SOLVED: To expand the gain band of semiconductor optical parts, and at the same time, to make the manufacture of the parts easier by forming a plurality of layers constituting a semiconductor chip to at least partially have a waveguide and layers having crystal continuity along the horizontal and vertical directions of the chip and extending the waveguides in the horizontal direction. SOLUTION: A semiconductor chip 2 is composed of four layered materials of indium arsenide, gallium arsenide, indium phosphide, and gallium phosphide constituting a waveguide 18 and is provided with upper and lower injection layers 5 and 4 respectively, having electrodes on its top and bottom. The waveguide 18 is extended in the horizontal direction and has an active structure 10, having a composition and energy gap which amplify light waves propagating through the waveguide 18 and the energy gap is change along the vertical direction. The active structure having the waveguide 18 amplifies the light waves having wavelengths, which fall within the gain band of the structure 10, and the average refractive index of the structure 10 is higher than those of the layers which constitute a part of the core of the waveguide 18 and surround the structure 10.</p> |
