DEVICE ISOLATING INSULATING FILM FORMING METHOD OF SEMICONDUCTOR

摘要

PURPOSE: A device isolating insulating film forming method of a semiconductor is provided to prevent the center thick or dishing by processing dry-type etching process without the 2nd CMP process after the 1st CMP process. CONSTITUTION: An element isolating insulating film forming method of a semiconductor comprises the steps of: forming a trench(15) on the semiconductor base plate(11) having a pad insulating film(13); applying the upper side of the pad insulating film as filling the trench with an insulating film for isolating the element; remaining in a specific thickness of an insulating film for isolating element on the upper side of the pad insulating film as CMP the insulating film for isolating element; the 1st dry-type etching process for etching the insulating film for isolating element; the 2nd dry-type etching process for removing the pad insulating film.