| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device wherein an examination time can be reduced by interrupting the test at the time when any bits are not non-defective articles, and changing the procedure and judgment when there is a write/delete disabled bit. SOLUTION: It is judged from an output of an inverter 20 whether or not all the subject memory cells have resulted in a desired data, by setting VERIFY 1 to a level 'L', VERIFY 2 to a level 'H', charging a node 21 by transistors 19, 22, comparing a write data with a read data by an EXOR gates 11-14, and giving the comparison output to transistors 15-18. Next, a time required for write or erase fail is reduced by setting both of VERIFY 1, 2 to the level 'L', and judging whether or not all the memory cells except one memory cell have resulted in a desired data.</p> |
