| 摘要 |
PROBLEM TO BE SOLVED: To use the low specific resistance mutual metal connecting body in an integrated circuit by forming the deep groove in an insulating layer along a contact region by etching, exposing a part of the contact region, and filling the upper groove, wherein the mutual connecting body is specified and formed, with silver and the like by plating. SOLUTION: An insulating layer 112 is formed on insulating layers 104 and 106 and conductive plug 110 along a substrate 102. Then, the insulating layer 112 is formed in the pattern and is selectively etched. Thus, a groove 114 is formed. In the groove 114, a part of the conductive plug 110 is exposed and extended on the insulating layers 104 and 106 to the other conductive plug, in contact with the different device or the input-output pads. The path of the mutual connecting body formed in the groove 114 is specified. Then, the upper part of the insulating layer 112 and the inside of the groove 114 are plated. A silver layer 116 is formed, and the groove 114 is filled. Thereafter, the part of the silver layer 116 at the upper side than the insulating layer 112 is removed through CMP, and the mutual connecting body is formed. |
