| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode capable of preventing occurrence of the phenomenon in which a field limiting innermost peripheral layer is broken at reverse biasing. SOLUTION: An anode metal electrode 8, composed of aluminum is formed in a region further in than an anode layer 3 formed on a main surface of a semiconductor substrate 1. Accordingly, an impurity diffused region 3 from an innermost peripheral face of a field limiting innermost periphery 4 to an outermost peripheral face of the anode electrode metal electrode 8 can be used as an electrical resistor. Therefore, it is possible to reduce holes density distributing from the lower side of the field limiting innermost periphery 4 toward a cathode layer 2 at the time of forward bias. As a result, it is possible to restrict the occurrence of a recovery current flowing locally largely towards the lower face of the field limiting innermost peripheral layer 4 at reverse biasing. |
