发明名称 SEMICONDUCTOR MECHANICAL VOLUME SENSOR AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a structure in which a part other than a movable structure is not eroded by sacrificial layer etching. SOLUTION: A beam structure 400 having a movable electrode 401 is constituted by substrate 100 in an adhesive substrate, in which first and second silicon substrates 100, 200 are adhered to each other via an insulating film 300, and a fixing electrode 500 and a fixing part 600 are constituted by the substrate 100. A movable electrode wiring which serves both as an anchor extends from a lower face of the beam structure 400, and a fixing electrode wiring 800 serving both as an anchor extends from the lower face of the fixing electrode 500. An exposure part of a silicon oxide film 37 which is a sacrifial layer left behind as the anchor below a fixing part 2C is coated with a stopper(polysilicon thin film) 38 for preventing sideetching, thereby eliminating the side-etching of the sacrificial layer silicon oxide film 37 and preventing the entering in of chip fractures and of particles.
申请公布号 JP2000049357(A) 申请公布日期 2000.02.18
申请号 JP19980213159 申请日期 1998.07.28
申请人 DENSO CORP 发明人 KATO NOBUYUKI;FUKADA TAKESHI;SAKAI MINEICHI
分类号 G01P15/125;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01P15/125
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