ENHANCED DRIVABILITY DRIVER TRANSISTOR STRUCTURE AND INCREASED CURRENT SUPPLY TRANSISTOR STRUCTURE

摘要

PURPOSE: An driver transistor structure having enhanced driving characteristic and an increased current supply transistor structure is provided to without increasing active area by a ring-shaped layout of an IGFET element. CONSTITUTION: The driver transistor structure having enhanced driving characteristic comprises: an active semiconductor area of a substrate; a multitude of conductive patterns arranged to the active semiconductor area; and each conductive pattern having one more ring-shaped portion, the ring-shaped portion forming a gate conductive material of an Insulated Gate Field Effect Transistor(IGFET)(42). The increased current supply transistor structure comprises: an active semiconductor area of the substrate; and a multitude of IGFETs formed by the ring-shaped portion of the conductive material pattern arranged to the active semiconductor area; and the IGFET having a source (46) and a drain terminal(48).