| 摘要 |
PURPOSE: A method for forming an element separation area of IC is provided to reduce a wiring parasitic capacitance, thereby enhancing an element characteristic. CONSTITUTION: A semiconductor device includes a semiconductor substrate(1) having a first conductive area, a trench element separation area formed on the substrate; an active area(13,14,23,24) for forming a semiconductor device determined by the trench element separation area; and a similar active area(a-j) having a second conductive impurity diffusion layer on the active area. Thereby, a wiring parasitic capacitance is reduced, and a wiring delay speed is improved, a circuit speed of a high speed is made, and a low power consumption is made.
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