发明名称 |
SILICON INTERCONNECTION PASSIVATION OPTIMIZED FOR MAXIMIZING REFLECTIVITY AND METALIZATION PROCESS |
摘要 |
PURPOSE: A method of passivation and metallization in a liquid crystal display is provided to increase a reflectivity of a pixel electrode. CONSTITUTION: The method for forming a metal surface with optimized reflectivity comprises the steps of: chemical-mechanical polishing of a dielectric layer formed on a metal after planarization of a silicon on glass; chemical-mechanical polishing of a dielectric layer formed on a metal after forming a bias; forming a metal glue layer composed of parallel titanium on the dielectric layer; depositing a metal on the glue layer at a low temperature; forming a least first layer in reflectivity strengthening coatings on the deposited metal; and forming a first reflectivity strengthening coating at a temperature which is very similar to the temperature for forming metal electrode layer.
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申请公布号 |
KR20000016915(A) |
申请公布日期 |
2000.03.25 |
申请号 |
KR19990027644 |
申请日期 |
1999.07.09 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
PAULEM MOOR;CALVIN KAL BROWN;RICHARD RUTREL |
分类号 |
G02F1/1343;G02F1/1335;(IPC1-7):G02F1/134 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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