发明名称 SILICON INTERCONNECTION PASSIVATION OPTIMIZED FOR MAXIMIZING REFLECTIVITY AND METALIZATION PROCESS
摘要 PURPOSE: A method of passivation and metallization in a liquid crystal display is provided to increase a reflectivity of a pixel electrode. CONSTITUTION: The method for forming a metal surface with optimized reflectivity comprises the steps of: chemical-mechanical polishing of a dielectric layer formed on a metal after planarization of a silicon on glass; chemical-mechanical polishing of a dielectric layer formed on a metal after forming a bias; forming a metal glue layer composed of parallel titanium on the dielectric layer; depositing a metal on the glue layer at a low temperature; forming a least first layer in reflectivity strengthening coatings on the deposited metal; and forming a first reflectivity strengthening coating at a temperature which is very similar to the temperature for forming metal electrode layer.
申请公布号 KR20000016915(A) 申请公布日期 2000.03.25
申请号 KR19990027644 申请日期 1999.07.09
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 PAULEM MOOR;CALVIN KAL BROWN;RICHARD RUTREL
分类号 G02F1/1343;G02F1/1335;(IPC1-7):G02F1/134 主分类号 G02F1/1343
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