| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of cracking even in the process of sputtering of high electric power and to improve the film forming rate by using a sintered body in which a specified content of silicon nitride of specified particle size is uniformly dispersed into a zinc sulfate base and whose relative density and strength are made high as a target. SOLUTION: Preferably, 10 to 30 mol% Si3N4 powder having 0.1 to 10μm average particle size and <=99.999 wt.% purity is blended into ZnS powder having about >=9.999% purity, they are uniformly mixed, thereafter, ethanol is moreover added thereto, and wet blending is executed in a plasticpot. In this slurry, ethanol is evaporated away, and, after cracking, it is hot-pressed and sintered at about 850 to 1150 deg.C under 150 to 250 kgf/cm2 in an Ar atmosphere. In this way, a sputtering target composed of a sintered body, having 95 to 98% relative density, small in micropores, high in bending strength and capable of increasing the area is obtd. By using this, large electric power sputtering is executed, and an optical recording medium protective film can efficiently be formed.
|
