| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a highly reliable semiconductor element, or to decrease the number of processes in the manufacture of the semiconductor element and to reduce the manufacturing cost. SOLUTION: First in a first process for this manufacturing method, a conductor film pattern 3 is formed on semiconductor substrate 2. A passivation film (insulation protecting film) 4 is formed on the semiconductor substrate 2 so as to cover this conductor film pattern 3. Then in a second process, a first opening 4a and a second opening 4b reaching the mutually different positions of the conductor film pattern 3 are formed. Thus, the parts obtained include a first electrode 5 for forming a bump comprising the part exposed to the outside through the first opening 4a of the conductor film pattern 3, a second electrode 6 for measuring the electrical characteristics, which comprises the part exposed to the outside through the second opening 4b of the conductor film pattern 3 and is formed at the position different from the first electrode 4, and a connecting part 7 which comprises the part between the first opening 4a and the second opening 4b of the conductor film pattern 3 and electrically connects the first electrode 5 and the second electrode 6.</p> |
