| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a polishing agent for CMP, which can be easily disposed of when it becomes a waste, can polish the surface of a substrate such as a silicon oxide film at a high rate without scratching, and can show a ratio of the rate of polishing a silicon oxide film to that of polishing a silicon nitride film of 10 or greater, and to provide a method for polishing a substrate therewith. SOLUTION: There are provided a polishing agent for CMP, comprising cerium oxide particles, a dispersant, a biodegradable additive which has a relative detergency of 10 to below 15 when the relative detergency of sodium tripolyphosphate is taken as 10, and that of disodium 3-oxapentanedioate is taken as 0, and water; and a method for polishing a substrate, comprising pressing a substrate on which a film to be polished has been formed against the polishing cloth of a polishing surface plate and moving the substrate and the surface plate to polish the film to be polished while feeding the polishing agent for CMP into a space between the film to be polished and the polishing cloth.</p> |
