发明名称 MANUFACTURE FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To prevent disappearance of a metal wiring and an increase in resistance due to erosion by a method wherein, after ground by a chemical and mechanical grinding method, a grinding surface is brought into contact with a solution containing a reducer. SOLUTION: After an oxide film (an interlayer insulation film) 1 is formed on a lower layer wiring layer, a contact hole 2 is formed by lithography and dry-etching. Tungsten is used as a burying metal of the contact hole 2, and after a tungsten film 3 is formed, the tungsten film 3 is ground by a chemical and mechanical grinding method by use of a grinding liquid. It is ground until tungsten within the contact hole 2 is left behind, and the grinding is ended. Then, as an oxide film 4 made of tungsten is formed on the surface, the reducer is brought into contact with the surface, thereby reducing the tungsten oxide film 4 into a metal to form a tungsten burying layer 5. More preferably, by use of a grinding liquid in which a grinding metal is not fused out, and also after grinding, a ground surface is brought into contact with a solution containing the reducer.</p>
申请公布号 JP2000124175(A) 申请公布日期 2000.04.28
申请号 JP19980293862 申请日期 1998.10.15
申请人 HITACHI LTD 发明人 SAITO AKIO
分类号 B24B57/02;B24B37/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B57/02
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