| 摘要 |
PROBLEM TO BE SOLVED: To ensure a superior corrosion resistance to aluminum, etc., as well as to efficiently remove a resist residue left in the formation of wiring in a process for producing a semiconductor device circuit, etc. SOLUTION: In a process for producing a semiconductor device circuit by forming an electrically conductive metallic film on a semiconductor substrate, the resist residue left in the course of wiring formation is removed with a resist removing solution consisting essentially of at least one of an alkylamine and an alkylammonium hydroxide, water, hydroxylamine and, optionally, a polar organic solvent. Washing with water containing hydrogen peroxide is subsequently carried out. |
