| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a hybrid memory device in which a RAM cell and a ROM cell can independently operate and data of the ROM cell can be loaded on the RAM cell and whose integration degree can be improved. SOLUTION: A RAM cell 4 and a ROM cell 5, which are installed between a pair of bit lines BIT and BIT', transmission transistors NA1 and NA2 installed between a pair of bit lines BIT and BIT' and the RAM cell 4 and transmission transistors NA3 and NA4 installed between a pair of bit lines BIT and BIT' and the ROM cell 5 are installed. At the time of operating the RAM cell 4 and the ROM cell 5, the transmission transistors NA1 and NA2 or the transmission transistors NA3 and NA4 corresponding to the operated cell are activated. At the time of loading data stored in the ROM cell 5 on the RAM cell 4, the transmission transistors NA1, NA2, NA3 and NA4 are simultaneously activated.</p> |
