| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate the beam irradiation overlapping parts on a semiconductor thin film, which are generated by repeating the scanning of energy beams, and to irradiate uniformly the energy beam extending over the whole surface of the thin film, by a method wherein the energy beam from a beam source is transmitted to a convex lens and a concave lens to deform the energy beam into a plate shape. SOLUTION: A semiconductor thin film is deposited on a substrate 26 and a high-output energy beam is irradiated on this thin film, whereby when an expansion of a crystal grain diameter in the thin film or a crystallization of the thin film is conducted, first, the high-output energy beam from a laser unit 21 is expanded in the widthwise direction of the thin film so that the energy beam can be irradiated extending over the whole surface of the thin film on the sample 26 by a concave lens 22 and a convex lens 23 and is deformed into tabular parallel beams. The deformed beam is formed in a width equal to that of the parallel beams by a convex lens 25 and in a state that an energy density is increased, the beam is scanned in the longitudinal direction of the thin film while being irradiated extending over the whole surface of the thin film.</p> |
