| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a semiconductor device which can detect the end point of vapor phase chemical etching accurately and can produce semiconductor devices with excellent characteristics over a large area. SOLUTION: An insulating substrate 10 is placed in the vacuum treatment chamber 110 of a housing 102. A thin film containing silicon is formed on the insulating substrate by a plasma which is induced by exciting etching gas supplied from a gas supply system 141 by an antenna 162. The thin film is patterned by vapor phase chemical etching in accordance with a resist pattern on the thin film. The emission intensity A of a light with a wavelength of a predetermined range is detected and the emission intensity B of a light with a specific wavelength included in the predetermined range is also detected during a patterning process by a photosensor 181. A control unit 192 divides the emission intensity B by the emission intensity A to generate a division signal, and the end of patterning is decided in accordance with the fluctuation of the division signal.</p> |
