Selective deposition and co-deposition processes for ferromagnetic thin films

摘要

A method for selectively depositing a ferromagnetic layer on a conducting layer, includes providing a substrate including a conducting layer; preparing a solution including a metal salt; adding a complexing agent to the solution; adding a reducing agent to the solution; while a temperature of the solution is less than 75° C., immersing the substrate in the solution for a predetermined period to deposit a ferromagnetic layer on the conducting layer by electroless deposition, wherein the ferromagnetic layer comprises one of cobalt (Co), iron (Fe) or CoFe; and after the predetermined period, removing the substrate from the solution.

主权项

1. A method for selectively depositing a ferromagnetic layer on a conducting layer, comprising:
providing a substrate including a conducting layer; preparing a solution including a metal salt; adding a complexing agent to the solution; adding a reducing agent to the solution, wherein the reducing agent comprises titanium trichloride and does not include any one of hypophosphite, borohydride, and dimethylamine borane; while a temperature of the solution is less than 50° C., immersing the substrate in the solution for a predetermined period to deposit a ferromagnetic layer on the conducting layer by electroless deposition, wherein the ferromagnetic layer comprises one of cobalt (Co), iron (Fe) or CoFe; and after the predetermined period, removing the substrate from the solution.