| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor of high drive power. SOLUTION: This is examples of a thin film transistor and a thin film transistor substrate. An NMOS thin film transistor 11 in which a source 3 and a drain 4, which are phosphorus-doped and consist of a polycrystalline Si film of 30 nm or less in film thickness, on a polycrystalline Si film 2 consisting of a polycrystalline Si film, which is adjacent to a channel 1 formed under a gate insulation film 5 consisting of SiO2 and a gate 6 consisting of a metal film, are formed over a substrate 20 consisting of glass and a buffer layer 21 consisting of an SiO2 film, and a PMOS thin film transistor 12 provided with a source 7 and a drain 8, which are boron-doped and consists of a polycrystalline Si film of 30 nm or less, are formed on the same substrate.</p> |
