| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an integrated photoelectric sensor together with a method for manufacturing the sensor wherein all electric signals are transmitted/received on one side surface of a semiconductor substrate while all optical signals transmitted/received on the other side surface, by integrating as may structure elements as possible on a semiconductor substrate for a sensor. SOLUTION: In an integrated photoelectric sensor which comprises a semiconductor substrate 6, and scans a graduation plate 10 carrying a graduation 9, multiple light detectors 2.1 and 2.2 are provided on the side surface opposite to the graduation plate 10. Here, the semiconductor substrate 6 comprises a light source 1 on the side surface opposite to the graduation plate 10 while at least partially away in the region of light detectors 2.1 and 2.2, being a semiconductor layer 11.3, a block layer 11.4, and the semiconductor substrate 6 are away in the region of light source, and is connected to a holder main body 7 on the side surface facing the graduation plate 10, with the holder main body 7 comprising at least one graduation 8.1, 8.2, and 8.3.</p> |
