| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a display which can display and drive a large area with large-capacity elements and which permits increase in the display capacity by specifying the oxygen concn. in the source and drain regions of a thin film transistor having a crystalline silicon film showing a specified measurement value by laser Raman spectroscopy. SOLUTION: A silicon oxide film as a blocking layer is formed on glass, on which a silicon film is formed. The oxygen concn. of the formed film is controlled to <=7×1019 cm-3, preferably <=1×1019 cm-3 so as to accelerate crystallization for the source and drain regions. After the silicon film in an amorphous state is formed, the film is heat-treated at a medium temp. in a nonoxidizing atmosphere to uniformly anneal the whole region. The silicon film causes transition from the amorphous structure to the state having higher order, and especially, in the region having rather high order when the silicon film is formed tends to crystallize into a crystal state. Therefore, when the film is measured by laser Raman spectroscopy, a peak can be observed as shifted to the lower frequency side from the peak of a single crystal silicon at 522 cm-1.</p> |
