METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to manufacture a semiconductor device by using a TFT structure of an accumulating structure. CONSTITUTION: A method for manufacturing a semiconductor device comprises the following steps. An isolation layer(22) is formed an active area and a field area on an N-type silicon substrate(21). A gate oxide layer and a word line are formed on the active area. A word line spacer is formed at a sidewall of the gate oxide layer and the word line. A P-type dopant is implanted to form a source/drain area on an exposed portion of the substrate and a P-MOSFET is formed therefrom. An interlayer dielectric(27) is deposited on an upper portion of the whole structure. A contact hole for exposing the source/drain area by removing selectively the interlayer dielectric. A P-type polysilicon layer is deposited the upper portion of the whole structure and a contact plug(29a,29b) is formed within the contact hole. An insulating layer(30) is deposited on the upper portion of the whole structure and a polysilicon layer pattern(31) is formed by patterning the insulating layer. A gate oxide layer and a word line are formed on the polysilicon layer pattern. A word line spacer is formed at a side face of the gate oxide layer and the word line. An N-type dopant is implanted to form a source/drain area on an exposed portion of the polysilicon layer pattern and an N-MOSFET is formed therefrom. A second interlayer dielectric(36) is deposited and flattened on the upper portion of the whole structure. A wiring contact is formed by removing selectively the second interlayer dielectric. A conductive material is deposited the wiring contact and the upper portion of the whole structure. A wiring(38) is formed by patterning the conductive material.