FABRICATION METHOD OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A fabrication method of semiconductor memory device is provided to solve the problems occurred in order to assure minimum pattern size. CONSTITUTION: A fabrication method of semiconductor memory device comprises steps of: forming a oxide layer and word lines surrounded by an insulating layer after depositing an insulating layer; patterning the insulating layer to be remain only on a bit line contact area; depositing a conductive layer; etching the conductive layer to form a storage electrode contact pad; depositing a first interlayer dielectric and then etching the patterned insulating layer to form a bit line contact hole; forming bit lines contacted to the substrate through the contact hole; forming a storage electrode contact hole; and forming storage electrodes contacted to the substrate through the contact hole.