METHOD FOR MANUFACTURING PHASE SHIFTING MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a phase shifting mask is provided to restrain a side lobe phenomenon by selectively etching chrome in such a manner that only a phase shifting area is exposed. CONSTITUTION: A phase shifting material(13) and a chrome film(15) are sequentially formed on a semiconductor substrate(11), and a photoresist(17) is coated thereon. The photoresist(17) is patterned by using an electron beam. By using the photoresist pattern(17) as a mask, the chrome film(15) and the phase shifting material(13) are sequentially dry etched so that a pattern is formed thereon. Then, by using the photoresist pattern(17) as a mask, the chrome film(15) is wet etched. After that, the photoresist pattern(17) is removed.