METHOD FOR FABRICATING STORAGE ELECTRODE

摘要

PURPOSE: A method for fabricating a storage electrode is provided to improve a device characteristic and a reliability by preventing a critical dimension from being increased excessively and an electrically weak fence from being generated. CONSTITUTION: A method for fabricating a storage electrode comprises forming an interlayer dielectric is formed on a semiconductor substrate, wherein a storage electrode contact is formed in the interlayer dielectric. A diffusion barrier layer and a thin film for a lower electrode are formed on the interlayer dielectric. A photoresist pattern is formed on the thin film. A predetermined thickness of the photoresist pattern is etched by a dry etching method. The thin film is etched by using a sputtering method using Cl2 gas, to thereby form a lower electrode having a round etch plane. After removing the photoresist pattern, a dielectric film is formed on the lower electrode by using a sputtering method.