METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to be easy to connect two conductors electrically by making an insulation film between the conductors easily broken away. CONSTITUTION: A method for fabricating a semiconductor device comprises forming an oxide film(10) for an interlayer insulation and flattening the oxide film(10). The oxide film(10) is selectively removed so as to form a contact for connecting a first polysilicon film as one node of an anti-fuse to a junction. The first polysilicon film is formed on the oxide film(10) comprising the contact hole. The first polysilicon film is patterned by using an anti-fuse mask, to thereby form a first polysilicon film pattern. A P2O5 layer is formed on the first polysilicon film pattern(12), and then is etched so as to remain on the pattern(12) unevenly. The first polysilicon film pattern(12) is etched by a dry etch method by using the P2O5 layer(13a) as a mask, and a dielectric film and a second polysilicon film are sequentially formed on a resultant structure.