| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to save the manufacturing time and cost of the semiconductor device by reducing the manufacturing process of the semiconductor device. CONSTITUTION: A trench(12) is formed on an isolation region of a cell area of a semiconductor substrate(10), wherein the trench(12) is also formed on an overlay measuring area(MA). A sacrificial oxide layer(14) is formed on the structure. A photoresist pattern(18) for forming a well is formed to expose the trench(12) of the cell area, wherein the trench(12) of the overlay measuring area(MA) is not exposed. Then, impurities are implanted into the semiconductor substrate(10) exposed by the photoresist pattern(18). The trench(12) is filled by an oxide layer(24). After removing the photoresist pattern(18) and the oxide layer(24), the oxide layer(24) protruded towards an upper portion of the trench(12) is removed by a CMP process.
|
