METHOD FOR MANUFACTURING MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a mask of a semiconductor device is provided to manufacture a tri-tone phase shift mask by simplifying a process. CONSTITUTION: A method for manufacturing a mask of a semiconductor device comprises the following steps. An opaque material and a shield material are deposited on a crystal substrate(31). A photoresist(34) is applied on the shield material. An upper portion of the photoresist is exposed and developed widely and a lower portion of the photoresist is exposed and developed narrowly. The photoresist is patterned. An opaque layer(32) is formed on the crystal substrate by etching the opaque material and the shield material. A shield layer(33) of narrower width than the opaque layer is formed on the opaque layer. The photoresist is removed.