| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a fuse structure, wherein a laser irradiated at copper fuse melting gives less damage to a silicon substrate at the lower part of copper fuse. SOLUTION: With a light-absorbing layer 4 of such material as of higher light absorptivity than a copper wiring layer provided at the upper part of a copper fuse layer 3, the light absorbed in the light absorbing layer 4 is conveyed to a copper wiring layer below the light absorbing layer 4 by thermal conduction, and further is conveyed to a barrier metal layer below it, for melting of a copper fuse even when a widely used infrared region wavelength laser is used. With a guard layer provided under the fuse layer 3, the damages to a silicon substrate, which arises at irradiating visible region wavelength laser, are suppressed, so that a copper fuse is melted even with a visible region wavelength laser with high light absorptivity with respect to copper. |
