发明名称 DUAL DAMASCENE MUTUAL CONNECTION STRUCTURE, INTEGRATED CIRCUIT DEVICE HAVING METAL ELECTRODE CAPACITOR, AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To allow use for a dual damascene as well by filling a first opening part, forming a mutual connection structure, forming upper part and lower part metal electrodes with a capacitor dielectrics inserted between them, and forming a capacitor in a second opening part. SOLUTION: A capacitor 24 comprises a lower part electrode 44, dielectrics 46, and upper part electrode 49. The lower part electrode 44 is formed of at least one layer of conductive metal layer such as tantalum nitride, comprising two metal layers 52 and 53. The upper part electrode 49 comprises a conductive metal layer 48 and conductive metal layer 50. The conductive metal, layer 48 is formed of tantalum nitride while the conductive metal layer 50 formed of copper. The conductive metal layer 48 acts as a border layer which prevents the copper from diffusing into the dielectrics 46 from the metal conductive layer 50. The capacitor 24 is at the height almost identical with the adjoining upper-part surface of a third dielectrics layer 42, while comprising an almost flat upper surface.
申请公布号 JP2000208745(A) 申请公布日期 2000.07.28
申请号 JP20000006225 申请日期 2000.01.12
申请人 LUCENT TECHNOL INC 发明人 CHUN-YUN SAN;ALLEN EN
分类号 H01L21/3205;H01L21/02;H01L21/316;H01L21/318;H01L21/768;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):H01L27/108;H01L21/320;H01L21/824 主分类号 H01L21/3205
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