MAGNETRON SPUTTERING DEPOSITION DEVICE AND METHOD

摘要

PROBLEM TO BE SOLVED: To provide a magnetron sputtering deposition device capable of improv ing the plane uniformity of the film thickness of the formed film so as to flex ibly correspond to the change of deposition conditions. SOLUTION: This magnetron sputtering deposition device has a susceptor 14 and a target holder 16 confronted in an airtight treating chamber 10. A semiconductor wafer W is placed on the susceptor 14. The target holder 16 is fitted with a target T contg. a deposition material. The target holder 16 is connected with a 1st RF power source 17. For forming the magnetic field with the magnetic line of force parallel to the lower face of the target T as the center, an electromagnet 18 is provided. The space between the susceptor 14 and the target holder 16 is provided with a coil antenna 21. The coil antenna 21 is connected with a 2nd RF power source 22. The 2nd RF power source can change the value of electric power independently from the 1st RF power source 17.