发明名称 FORMATION OF DIAMONDLIKE CARBON FILM
摘要 PROBLEM TO BE SOLVED: To form films on many members in a large capacity space at a time by forming substrate films on the surfaces of members in the same reaction vessel, forming diamondlike carbon films thereon, thereafter generating the plasma of oxygen in the reaction vessel and etching the films of carbon or essentially consisting of carbon in the reaction vessel. SOLUTION: Space (plasma space) between a pair of electrodes 3-1 and 3-2 provided by being away each other on one end side and the other end side of a reaction space 8 is provided with substrates 1, the pressure in the reaction space 8 is reduced, and reactive gas is fed from a gas system 30. For the convertion of the reactive gas into plasma, respective electrode 3-1 and 3-2 are fed with electromagnetic energy of prescribed electric power and frequency via the feeding means 15-1 and 15-2 therefor and matching boxes 16-1 and 16-2. So that respective electrode 3-1 and 3-2 can be applied with alternating voltage symmetrical each other or of the same phase, adjusting and controlling are executed with a phase adjuster 26. Then, film formation and etching are executed.
申请公布号 JP2000226664(A) 申请公布日期 2000.08.15
申请号 JP20000056708 申请日期 2000.03.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;HAYASHI SHIGENORI;ISHIDA NORIYA;SASAKI MARI;TAKEYAMA JUNICHI
分类号 B32B9/00;C23C16/27;(IPC1-7):C23C16/27 主分类号 B32B9/00
代理机构 代理人
主权项
地址