发明名称 |
SEMICONDUCTOR BODY, DYNAMIC RANDOM ACCESS MEMORY, ELECTRIC ISOLATION, AND MANUFACTURE OF MEMORY CELL |
摘要 |
PROBLEM TO BE SOLVED: To provide a dynamic random access memory formed at a semiconductor body comprising individual paired memory cell separated each other by a vertical electric isolation trench and separated from a support circuit. SOLUTION: An isolation trench 20, comprising a side wall, upper part, and lower part, encloses the region of a semiconductor body 10 comprising a memory cell. Thus, the paired memory cell is electrically separated each other, while separated from a support circuit which is not in the enclosed region but contained in the semiconductor body. The isolation trench lower-part is filled with a conductive material 14, which material comprises a side wall part which is at least partially separated from the trench lower-part side wall by a first electric insulator and a lower part electrically connecting to the semiconductor body. The isolation trench upper-part is filled with a second electric insulator. |
申请公布号 |
JP2000228504(A) |
申请公布日期 |
2000.08.15 |
申请号 |
JP20000028340 |
申请日期 |
2000.02.04 |
申请人 |
INFINEON TECHNOL NORTH AMERICA CORP;INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
MANDELMAN JACK A;LAROSA GIUSEPPE;RADENS CARL;DIVAKARUNI RAMA;GRUENING ULRIKE |
分类号 |
H01L21/76;H01L21/763;H01L21/765;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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