发明名称 OPTICAL MATERIAL FOR PHOTOLITHOGRAPHY, MEASURING METHOD OF ITS TRANSMITTANCE, AND PHOTOLITHOGRAPHY DEVICE
摘要 PROBLEM TO BE SOLVED: To realize a projection aligner due to photolithography using light with a wavelength of 185 nm or less as a light source by using a calcium fluoride crystal with high transmittance as the optical material of a photolithography device. SOLUTION: Light being emitted from a light source 1 is uniformly applied to a mask 3 where a pattern is formed via a lighting optical system 2. Light from the pattern being formed in the mask 3 forms a mask pattern image on a wafer 9 via a projection optical system 8. In all refraction optical members (lens constituents) for composing the projection optical system 8, an optical material made of a calcium fluoride crystal is used. In the measurement of the inside transmittance of the optical material, a measuring sample with a thickness of 30 mm or more is cut from the optical material consisting of the calcium fluoride crystal, and the transmittance in a specific wavelength of 185 nm or less of the sample is actually measured. Influence due to the decline of the transmittance corresponding to a surface reflection loss is eliminated from the actually measured transmittance, thus calculating the inside transmittance per unit thickness.
申请公布号 JP2000227400(A) 申请公布日期 2000.08.15
申请号 JP19990026746 申请日期 1999.02.03
申请人 NIKON CORP 发明人 SAKUMA SHIGERU;SHIOZAWA MASAKI
分类号 H01L21/027;C30B29/12;G01M11/00;G01N21/33;G01N21/59;G02B1/02;G03F7/20;(IPC1-7):G01N21/59 主分类号 H01L21/027
代理机构 代理人
主权项
地址