发明名称 |
OPTICAL MATERIAL FOR PHOTOLITHOGRAPHY, MEASURING METHOD OF ITS TRANSMITTANCE, AND PHOTOLITHOGRAPHY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To realize a projection aligner due to photolithography using light with a wavelength of 185 nm or less as a light source by using a calcium fluoride crystal with high transmittance as the optical material of a photolithography device. SOLUTION: Light being emitted from a light source 1 is uniformly applied to a mask 3 where a pattern is formed via a lighting optical system 2. Light from the pattern being formed in the mask 3 forms a mask pattern image on a wafer 9 via a projection optical system 8. In all refraction optical members (lens constituents) for composing the projection optical system 8, an optical material made of a calcium fluoride crystal is used. In the measurement of the inside transmittance of the optical material, a measuring sample with a thickness of 30 mm or more is cut from the optical material consisting of the calcium fluoride crystal, and the transmittance in a specific wavelength of 185 nm or less of the sample is actually measured. Influence due to the decline of the transmittance corresponding to a surface reflection loss is eliminated from the actually measured transmittance, thus calculating the inside transmittance per unit thickness. |
申请公布号 |
JP2000227400(A) |
申请公布日期 |
2000.08.15 |
申请号 |
JP19990026746 |
申请日期 |
1999.02.03 |
申请人 |
NIKON CORP |
发明人 |
SAKUMA SHIGERU;SHIOZAWA MASAKI |
分类号 |
H01L21/027;C30B29/12;G01M11/00;G01N21/33;G01N21/59;G02B1/02;G03F7/20;(IPC1-7):G01N21/59 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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