APPARATUS FOR VISUAL EXAMINATION OF PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide the apparatus capable of performing the visual examination of a photomask under the same condition as an actual exposure condition on a wafer in a stepper and capable of also calculating the optimum process condition in wafer processing with respect to a critical pattern. SOLUTION: The pattern of a photomask S1 is converted into mask pattern data S4 and a CAD pattern S5 is converted into mask pattern data S7 and light intensity distribution data S10, S11 are obtained with respect to both mask pattern data under an optical condition S19 to be subjected to data comparing and evaluating processing S12 and, subsequently, a critical pattern is extracted by pattern data extracting processing S15 and exposure/development calculation S16 is executed under a wafer process condition S17 and the calculation result and the CAD pattern S5 are used to execute collation/searching processing S18 and the setting S19 of the optimum wafer processing condition is executed.