发明名称 CHARGE PUMP CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To obtain a charge pump circuit that can save current dissipation, when the charge pump operation stops and shortens the time until the maximum output current can be obtained at the resetting time. SOLUTION: When the charge pump operations stops (during standby condition), all capacitor node drive voltages of the charge pump circuit 1 is fixed to the voltage nearer to the potential VDDR of the boosting node. Normally, an output OSC signal of the oscillator 2 for transferring the 'H'/'L' level is invalidated, under the control for stopping the charge pump operation with the ENABLE signal. At this time, the charge pump circuit 1 transfers the same level for controlling inverse flow control to each capacitor node. Namely, if the potential VDDR of voltage boosting node is a positive potential, it is 'H' level for driving the capacitor, and if the potential VDDR is a negative potential, it is 'L' level for driving the capacitor.</p>
申请公布号 JP2000270541(A) 申请公布日期 2000.09.29
申请号 JP19990073491 申请日期 1999.03.18
申请人 TOSHIBA CORP 发明人 KURIYAMA MASAO
分类号 G11C11/413;G11C5/14;G11C11/408;G11C16/06;G11C16/30;H02M3/07;(IPC1-7):H02M3/07 主分类号 G11C11/413
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