WRITE-IN CIRCUIT FOR NON-VOLATILE MEMORY

摘要

PROBLEM TO BE SOLVED: To shorten a write-in time of a non-volatile memory. SOLUTION: When the whole contents of one page of a flash memory is rewritten, as execution of an initializing program, as an instruction signal PAGEWRT of a logic value '1' is set to a register 12, an instruction signal PAGEWRT of a logic value '0' is supplied to a write-in control circuit 10 and write-in operation of the flash memory 1 is controlled. That is, in a series of rewriting sequence in the flash memory 1, output operation of existing data for page buffers 5, 6 of the flash memory 1 can be inhibited, and a write-in time can be largely reduced. Especially, as the flash memory 1 has a long write-in time of several msec per one cell, it shows a remarkable effect.