| 摘要 |
A quantum well type light-emitting diode having a light-emitting portion and formed of a plurality of semiconductor layers including at least one light-generating layer of a quantum well structure for generating a light, and a pair of reflecting layers between which the at least one light-generating layer is interposed for reflecting the light generated by the at least one light-generating layer, so that the pair of reflecting layers functions as a light resonator, the quantum well type light-emitting diode emitting the light generated by the light-generating layer from the light-emitting portion, wherein the improvement comprises : each of the at least one light-generating layer having a lattice constant which is smaller than that of at least two semiconductor layers of the plurality of semiconductor layers, which two semiconductor layers are located adjacent to and on opposite sides of the at least one light-generating layer.
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